Self-Assembly Process: III-V Semiconductor Nanowires

Lead Faculty Researcher: Xiuling Li (ECE, Illinois)
Lead Faculty Researcher:
Xiuling Li, ECE, Illinois

Planar self-aligned, twin-defect free and transfer printable GaAs nanowires are produced using metalorganic chemical vapor deposition (MOVCD) on GaAs (100) with colloidal Au nanoparticles as catalyst.  These uniform diameter nanowires, self aligned in <110> direction in the plane of <100>, are optimally grown at 460-475 oC.  Growth rate and morphology are controlled through temperature and other growth parameters. TEM confirms the lack of twin defects. Bulk-like low field electron mobility are extracted with a three terminal measurement, which could potentially lead to high performance nanoelectronic and nanophotonics devices.

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Planar self-aligned, twin-defect free and transfer printable GaAs nanowires are produced using metalorganic chemical vapor deposition (MOVCD) on GaAs (100) with colloidal Au nanoparticles as catalyst.  These uniform diameter nanowires, self aligned in <110> direction in the plane of <100>, are optimally grown at 460-475 oC.  Growth rate and morphology are controlled through temperature and other growth parameters. TEM confirms the lack of twin defects. Bulk-like low field electron mobility are extracted with a three terminal measurement, which could potentially lead to high performance nanoelectronic and nanophotonics devices.